BLF6G38-100,112

Product Overview

Category: RF Power Transistor
Use: Amplification of radio frequency signals
Characteristics: High power, high efficiency, broadband capability
Package: SOT539A
Essence: Gallium Nitride (GaN) technology
Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

• Frequency Range: 0.03 - 2.5 GHz
• Output Power: 100 W
• Efficiency: >60%
• Gain: 16 dB
• Voltage: 32 V
• Current: 14 A
• Thermal Resistance: 0.4 °C/W

Detailed Pin Configuration

1. Gate
2. Drain
3. Source
4. Ground

Functional Features

• Broadband capability for multi-band applications
• High power density
• Excellent thermal stability
• High efficiency over a wide frequency range

Advantages

• High power output
• Wide frequency range coverage
• Compact package size
• Suitable for multi-band applications

Disadvantages

• Higher cost compared to traditional transistors
• Requires careful handling due to sensitivity to electrostatic discharge

Working Principles

The BLF6G38-100,112 operates on the principle of amplifying radio frequency signals using GaN technology. When a signal is applied to the gate terminal, the transistor amplifies it and delivers a high-power output at the drain terminal.

Detailed Application Field Plans

1. Telecommunications: Base station amplifiers, repeaters
2. Radar systems: Pulse amplifiers, weather radar
3. Industrial, scientific, and medical (ISM) applications: Plasma generators, RF heating

Detailed and Complete Alternative Models

1. BLF888A - Similar power output, wider frequency range
2. BLF578XR - Lower power output, lower cost
3. BLF2425M7L - Higher power output, narrower frequency range

This comprehensive entry provides an in-depth understanding of the BLF6G38-100,112, covering its product details, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.