The BLF871,112 is a high-power RF transistor designed for use in various applications. This entry provides an overview of the product, including its category, use, characteristics, packaging, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
The BLF871,112 features a 4-pin LFPAK56D package with the following pin configuration: 1. Gate 2. Drain 3. Source 4. Ground
The BLF871,112 operates on the principle of GaN technology, which allows for high-power amplification with high efficiency across a wide frequency range. The transistor's design enables it to handle high input power and deliver amplified output signals with minimal loss.
The BLF871,112 is well-suited for use in the following applications: - Broadcast transmitters - Mobile communication base stations - Radar systems - Industrial, scientific, and medical (ISM) equipment
For users seeking alternative RF transistors, the following models can be considered: - BLF888A - BLF184XR - BLF578XR
In conclusion, the BLF871,112 offers high-power amplification capabilities with excellent efficiency and thermal stability, making it an ideal choice for various RF applications.
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What is BLF871,112?
What is the typical frequency range for BLF871,112?
What is the maximum output power of BLF871,112?
What are the key applications of BLF871,112?
What is the recommended operating voltage for BLF871,112?
What are the thermal considerations for using BLF871,112?
Does BLF871,112 require any special matching or tuning?
Is BLF871,112 suitable for linear amplifier designs?
What are the typical efficiency characteristics of BLF871,112?
Are there any known reliability issues with BLF871,112?