2N690A Transistor

Product Overview

Category:

The 2N690A is a bipolar junction transistor (BJT) belonging to the NPN type.

Use:

It is commonly used as an amplifier or switch in electronic circuits.

Characteristics:

• Low power dissipation
• High current gain
• Medium voltage capability

Package:

The 2N690A is typically available in a TO-18 metal can package.

Essence:

This transistor is essential for amplifying and switching electronic signals in various applications.

Packaging/Quantity:

It is usually packaged individually and sold in quantities suitable for small-scale electronic projects.

Specifications

• Collector-Base Voltage: 60V
• Collector-Emitter Voltage: 40V
• Emitter-Base Voltage: 5V
• Collector Current: 200mA
• Power Dissipation: 300mW
• Transition Frequency: 50MHz

Detailed Pin Configuration

The 2N690A transistor has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

• High current gain allows for small base current to control larger collector current.
• Low power dissipation makes it suitable for low-power applications.
• Medium voltage capability enables use in a wide range of circuits.

Advantages and Disadvantages

Advantages

• High current gain
• Low power dissipation
• Medium voltage capability

Disadvantages

• Limited maximum collector current compared to other transistors
• Moderate transition frequency

Working Principles

The 2N690A operates based on the principles of amplification and control of electrical currents. When a small current flows into the base, it controls a larger current flowing between the collector and emitter.

Detailed Application Field Plans

The 2N690A transistor finds applications in: - Audio amplifiers - Signal amplification circuits - Switching circuits - Oscillator circuits

Detailed and Complete Alternative Models

Some alternative models to the 2N690A include: - 2N2222 - BC547 - 2N3904 - BC548

In conclusion, the 2N690A transistor is a versatile component with applications in various electronic circuits, offering high current gain and low power dissipation. Its characteristics make it suitable for amplification and switching tasks in low-power applications.

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