CDBF0140R-HF Product Overview

Introduction

The CDBF0140R-HF belongs to the category of high-frequency power transistors and is widely used in various electronic applications. This entry provides a comprehensive overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: High-frequency power transistors
• Use: Amplification and switching in high-frequency electronic circuits
• Characteristics: High power handling capacity, low noise, and high frequency operation
• Package: TO-220AB package
• Essence: Power amplification and signal switching
• Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

• Model: CDBF0140R-HF
• Maximum Power Dissipation: 40W
• Collector-Emitter Voltage: 140V
• Collector Current: 10A
• Transition Frequency: 30MHz
• Operating Temperature Range: -55°C to 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3

Detailed Pin Configuration

The CDBF0140R-HF transistor has a standard TO-220AB package with three pins: 1. Collector (C): Connects to the positive supply voltage 2. Base (B): Controls the transistor's conductivity 3. Emitter (E): Connects to the ground or common reference point

Functional Features

• High power handling capacity for efficient amplification
• Low noise characteristics for improved signal fidelity
• High-frequency operation suitable for radio frequency (RF) applications
• Robust construction for reliable performance in demanding environments

Advantages and Disadvantages

Advantages

• High power dissipation capability
• Low noise operation
• Suitable for high-frequency applications

Disadvantages

• Limited maximum collector-emitter voltage
• Relatively narrow operating temperature range

Working Principles

The CDBF0140R-HF operates based on the principles of bipolar junction transistors, utilizing the control of current flow between the collector and emitter terminals through the base terminal to amplify or switch electronic signals.

Detailed Application Field Plans

The CDBF0140R-HF is commonly used in the following applications: - RF power amplifiers - Switching power supplies - RF signal generators - RF modulators

Detailed and Complete Alternative Models

• Alternative Model 1: CDBF0150R-HF
  • Similar specifications with higher collector-emitter voltage
• Alternative Model 2: CDBF0120R-HF
  • Similar specifications with lower collector-emitter voltage
• Alternative Model 3: CDBF0140R-LF
  • Low-noise version with similar specifications

In conclusion, the CDBF0140R-HF high-frequency power transistor offers high power handling capacity, low noise operation, and is suitable for various high-frequency electronic applications. Its robust design and functional features make it a valuable component in RF amplification and switching circuits.

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