FS75R12W2T4BOMA1

Product Overview

• Category: Power Electronics
• Use: This product is a power module designed for high-power applications, such as industrial motor drives, renewable energy systems, and power supplies.
• Characteristics: The FS75R12W2T4BOMA1 features high power density, low thermal resistance, and high reliability. It is designed to operate in harsh environments and deliver consistent performance.
• Package: The module is housed in a rugged and compact package, designed to withstand demanding operating conditions.
• Essence: The essence of this product lies in its ability to efficiently handle high power levels while maintaining reliability and robustness.
• Packaging/Quantity: The FS75R12W2T4BOMA1 is typically packaged individually and is available in various quantities depending on the application requirements.

Specifications

• Voltage Rating: 1200V
• Current Rating: 75A
• Module Type: IGBT (Insulated Gate Bipolar Transistor)
• Topology: Dual IGBT with anti-parallel diode
• Mounting Style: Screw
• Isolation Voltage: 2500V
• Operating Temperature Range: -40°C to 150°C
• Weight: 150g

Detailed Pin Configuration

The FS75R12W2T4BOMA1 module consists of several pins arranged in a specific configuration to facilitate easy integration into the target system. The detailed pin configuration includes the gate, emitter, collector, and various control and monitoring pins.

Functional Features

• High Power Density: The module offers high power handling capability in a compact form factor.
• Low Thermal Resistance: Efficient thermal management ensures reliable operation even under high load conditions.
• Robust Construction: Designed to withstand rugged industrial environments, ensuring long-term reliability.
• Integrated Protection Features: Built-in protection circuits safeguard the module from overcurrent, overvoltage, and overtemperature conditions.

Advantages and Disadvantages

Advantages

• High power handling capacity
• Compact design
• Robust construction for harsh environments
• Integrated protection features

Disadvantages

• Higher cost compared to lower power alternatives
• Requires careful thermal management in high-power applications

Working Principles

The FS75R12W2T4BOMA1 operates based on the principles of insulated gate bipolar transistor technology. When a control signal is applied to the gate terminal, the module allows current flow between the collector and emitter terminals, enabling power control in the target system.

Detailed Application Field Plans

This power module is well-suited for a wide range of applications including: - Industrial motor drives - Renewable energy systems - Uninterruptible power supplies (UPS) - Welding equipment - Electric vehicle charging systems

Detailed and Complete Alternative Models

• FS100R12W2T4BOMA1: 100A, 1200V IGBT power module
• FS50R12W2T4BOMA1: 50A, 1200V IGBT power module
• FS150R12W2T4BOMA1: 150A, 1200V IGBT power module

Note: The alternative models listed above are indicative and may vary based on specific application requirements.

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This comprehensive entry provides an in-depth understanding of the FS75R12W2T4BOMA1 power module, covering its specifications, functional features, advantages, and application field plans.