IPD80N06S3-09
Introduction
The IPD80N06S3-09 is a power MOSFET belonging to the category of electronic components. This device is widely used in various applications due to its unique characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Switching and amplification in electronic circuits
- Characteristics: High current handling capability, low on-resistance, fast switching speed
- Package: TO-252 (DPAK)
- Essence: Efficient power management
- Packaging/Quantity: Typically available in reels of 2500 units
Specifications
- Voltage Rating: 60V
- Current Rating: 80A
- On-Resistance: 8.5mΩ
- Gate Charge: 38nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPD80N06S3-09 features a standard pin configuration with three pins: gate, drain, and source. The pinout is as follows: - Pin 1 (Gate) - Pin 2 (Drain) - Pin 3 (Source)
Functional Features
- High current handling capability
- Low on-resistance for minimal power loss
- Fast switching speed for efficient operation
- Robust construction for reliability in demanding applications
Advantages and Disadvantages
Advantages
- High current rating allows for use in power applications
- Low on-resistance results in reduced power dissipation
- Fast switching speed enables efficient circuit operation
Disadvantages
- Higher gate charge compared to some alternative models
- Limited voltage rating compared to certain high-voltage applications
Working Principles
The IPD80N06S3-09 operates based on the principle of field-effect transistors. When a suitable voltage is applied to the gate terminal, it controls the flow of current between the drain and source terminals. This mechanism enables the device to function as a switch or amplifier in electronic circuits.
Detailed Application Field Plans
The IPD80N06S3-09 finds extensive use in various applications, including: - Power supplies - Motor control - LED lighting - Audio amplifiers - DC-DC converters
Detailed and Complete Alternative Models
Some alternative models to the IPD80N06S3-09 include: - IRF3205 - FDP8870 - STP80NF03L
In summary, the IPD80N06S3-09 power MOSFET offers high current handling capability, low on-resistance, and fast switching speed, making it suitable for diverse electronic applications.
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What is the maximum drain-source voltage of IPD80N06S3-09?
- The maximum drain-source voltage of IPD80N06S3-09 is 60 volts.
What is the continuous drain current rating of IPD80N06S3-09?
- The continuous drain current rating of IPD80N06S3-09 is 80 amperes.
What is the on-state resistance (RDS(on)) of IPD80N06S3-09?
- The on-state resistance (RDS(on)) of IPD80N06S3-09 is typically 9 milliohms at a VGS of 10 volts.
Can IPD80N06S3-09 be used in high-power applications?
- Yes, IPD80N06S3-09 is suitable for high-power applications due to its high current and voltage ratings.
What type of package does IPD80N06S3-09 come in?
- IPD80N06S3-09 comes in a TO-252 (DPAK) package.
Is IPD80N06S3-09 suitable for switching applications?
- Yes, IPD80N06S3-09 is designed for use in switching applications such as motor control and power supplies.
What is the typical gate threshold voltage of IPD80N06S3-09?
- The typical gate threshold voltage of IPD80N06S3-09 is 2.5 volts.
Does IPD80N06S3-09 require a heat sink for operation?
- It is recommended to use a heat sink with IPD80N06S3-09, especially in high-power or high-duty cycle applications.
What are the typical applications for IPD80N06S3-09?
- Typical applications for IPD80N06S3-09 include motor drives, DC-DC converters, and power management in automotive and industrial systems.
Is IPD80N06S3-09 suitable for use in harsh environments?
- IPD80N06S3-09 has a rugged design and can withstand harsh environments, making it suitable for automotive and industrial applications.