IXFK27N80Q
Product Overview
Category
The IXFK27N80Q belongs to the category of power MOSFETs.
Use
It is used for high-voltage, high-speed switching applications in various electronic circuits and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
- Avalanche energy specified
- RoHS compliant
Package
The IXFK27N80Q is typically available in a TO-264 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
The IXFK27N80Q is usually packaged individually and comes in varying quantities depending on the supplier.
Specifications
- Drain-Source Voltage (VDS): 800V
- Continuous Drain Current (ID): 27A
- On-Resistance (RDS(on)): 0.19Ω
- Gate-Source Voltage (VGS): ±30V
- Total Gate Charge (Qg): 68nC
- Avalanche Energy (EAS): 330mJ
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The pin configuration of the IXFK27N80Q typically includes three pins: the gate (G), drain (D), and source (S).
Functional Features
- High voltage capability allows for use in high-power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching circuits.
- Low gate charge reduces drive requirements and enhances performance.
- Avalanche energy specification ensures reliability in rugged operating conditions.
Advantages and Disadvantages
Advantages
- Suitable for high-voltage applications
- Low power dissipation
- Fast switching speed
- Reliable performance under rugged conditions
Disadvantages
- Higher cost compared to lower voltage MOSFETs
- Requires careful handling due to high voltage capabilities
Working Principles
The IXFK27N80Q operates based on the principles of field-effect transistors, utilizing its high voltage capability and low on-resistance to efficiently control the flow of power in electronic circuits.
Detailed Application Field Plans
The IXFK27N80Q is commonly used in: - Switching power supplies - Motor control systems - Inverters and converters - Industrial automation equipment - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the IXFK27N80Q include: - IXFK44N50Q - IXFK60N90Q - IXFK75N120Q - IXFK100N160Q
In conclusion, the IXFK27N80Q power MOSFET offers high-voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of high-power applications in various industries.
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What is IXFK27N80Q?
- IXFK27N80Q is a high power MOSFET designed for various technical applications requiring high current and voltage handling capabilities.
What is the maximum voltage rating of IXFK27N80Q?
- The maximum voltage rating of IXFK27N80Q is 800V, making it suitable for high voltage applications.
What is the maximum current rating of IXFK27N80Q?
- The maximum continuous drain current rating of IXFK27N80Q is 27A, allowing it to handle high current loads.
What are the typical applications of IXFK27N80Q?
- IXFK27N80Q is commonly used in applications such as motor control, power supplies, inverters, and industrial equipment where high power switching is required.
What is the on-state resistance (RDS(on)) of IXFK27N80Q?
- The on-state resistance of IXFK27N80Q is typically low, enabling efficient power dissipation and minimizing conduction losses.
Does IXFK27N80Q require a heat sink for operation?
- Depending on the application and operating conditions, IXFK27N80Q may require a heat sink to ensure proper thermal management and prevent overheating.
Is IXFK27N80Q suitable for automotive applications?
- Yes, IXFK27N80Q can be used in automotive systems such as electric vehicle powertrains, battery management, and charging systems.
What are the recommended gate drive requirements for IXFK27N80Q?
- Proper gate drive voltage and current levels must be provided to ensure fast and reliable switching of IXFK27N80Q, typically requiring a gate driver IC or circuit.
Can IXFK27N80Q be used in parallel configurations for higher current handling?
- Yes, IXFK27N80Q can be paralleled to increase the overall current handling capability in applications requiring higher power levels.
Are there any specific layout considerations when using IXFK27N80Q in a PCB design?
- Proper attention to layout design, including minimizing parasitic inductance and ensuring adequate thermal vias, is crucial for optimizing the performance and reliability of IXFK27N80Q in a PCB application.