IXFN180N07
Product Overview
Category
The IXFN180N07 belongs to the category of power MOSFETs.
Use
It is commonly used in high-power applications such as motor control, power supplies, and inverters.
Characteristics
- High voltage and current handling capability
- Low on-state resistance
- Fast switching speed
- Low gate drive power requirements
Package
The IXFN180N07 is typically available in a TO-268 package.
Essence
The essence of the IXFN180N07 lies in its ability to efficiently handle high power levels while maintaining low losses.
Packaging/Quantity
It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.
Specifications
- Voltage Rating: 75V
- Current Rating: 180A
- On-State Resistance: 1.7 mΩ
- Gate Threshold Voltage: 2.5V
- Maximum Power Dissipation: 625W
Detailed Pin Configuration
The IXFN180N07 typically has three pins: 1. Source (S) 2. Drain (D) 3. Gate (G)
Functional Features
- Low conduction losses
- Fast switching times
- High current-carrying capability
- Robust thermal performance
Advantages
- High power handling capacity
- Efficient switching characteristics
- Low on-state resistance
- Suitable for high-frequency applications
Disadvantages
- Higher cost compared to standard MOSFETs
- Requires careful thermal management due to high power dissipation
Working Principles
The IXFN180N07 operates based on the principle of field-effect, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. When the gate-source voltage exceeds the threshold, the MOSFET enters the conducting state, allowing current to flow through.
Detailed Application Field Plans
The IXFN180N07 finds extensive use in various high-power applications, including: - Motor drives for electric vehicles - Industrial power supplies - Renewable energy systems - Uninterruptible power supplies (UPS) - Welding equipment
Detailed and Complete Alternative Models
Some alternative models to the IXFN180N07 include: - IRFP4668PbF - FDPF33N25T - AUIRF7739L2
In conclusion, the IXFN180N07 power MOSFET offers high-performance characteristics suitable for demanding high-power applications, making it a preferred choice for industries requiring efficient power management solutions.
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What is the maximum drain-source voltage of IXFN180N07?
- The maximum drain-source voltage of IXFN180N07 is 75V.
What is the continuous drain current rating of IXFN180N07?
- The continuous drain current rating of IXFN180N07 is 180A.
What is the on-state resistance (RDS(on)) of IXFN180N07?
- The on-state resistance (RDS(on)) of IXFN180N07 is typically 1.7mΩ at VGS = 10V.
What is the gate threshold voltage of IXFN180N07?
- The gate threshold voltage of IXFN180N07 is typically 2.5V.
What is the maximum junction temperature of IXFN180N07?
- The maximum junction temperature of IXFN180N07 is 175°C.
What are the typical applications for IXFN180N07?
- IXFN180N07 is commonly used in high-current, high-frequency power converters, motor drives, and other high-power applications.
Does IXFN180N07 require a heat sink for operation?
- Yes, IXFN180N07 typically requires a heat sink to dissipate heat effectively, especially when operating at high currents.
What is the input capacitance of IXFN180N07?
- The input capacitance of IXFN180N07 is typically 8500pF.
Is IXFN180N07 suitable for automotive applications?
- Yes, IXFN180N07 is designed to meet the requirements for automotive applications, including AEC-Q101 qualification.
What are the recommended gate driver specifications for IXFN180N07?
- It is recommended to use a gate driver capable of providing sufficient current and voltage to drive the gate of IXFN180N07 effectively, such as a driver with peak output currents of several amps and suitable voltage levels.