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IXFN64N50PD3
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IXFN64N50PD3

Product Overview

Category

The IXFN64N50PD3 belongs to the category of power MOSFETs.

Use

It is used for high-power applications such as power supplies, motor control, and inverters.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Package

The IXFN64N50PD3 is typically available in a TO-264 package.

Essence

The essence of the IXFN64N50PD3 lies in its ability to efficiently handle high power levels while maintaining low on-resistance.

Packaging/Quantity

It is commonly packaged in reels or tubes and is available in varying quantities depending on the supplier.

Specifications

  • Voltage Rating: 500V
  • Current Rating: 64A
  • On-Resistance: 0.085Ω
  • Gate Threshold Voltage: 2.5V
  • Total Gate Charge: 90nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IXFN64N50PD3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in high-power applications.
  • Low on-resistance minimizes power loss and heat generation.
  • Fast switching speed enables efficient control in various applications.

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • High reliability

Disadvantages

  • Higher cost compared to lower-rated MOSFETs
  • Requires careful handling due to sensitivity to static electricity

Working Principles

The IXFN64N50PD3 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXFN64N50PD3 is well-suited for use in the following applications: - Power supplies - Motor control systems - Inverters for renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IXFN64N50PD3 include: - IRFP4668PbF - FDPF51N25T - STW45NM50FD

In conclusion, the IXFN64N50PD3 is a high-performance power MOSFET suitable for demanding high-power applications. Its combination of high voltage capability, low on-resistance, and fast switching speed make it an ideal choice for power supply, motor control, and inverter applications.

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10 pirs û bersivên hevpar ên têkildarî sepana IXFN64N50PD3 di çareseriyên teknîkî de navnîş bikin

  1. What is the maximum drain-source voltage of IXFN64N50PD3?

    • The maximum drain-source voltage of IXFN64N50PD3 is 500V.

  2. What is the continuous drain current rating of IXFN64N50PD3?

    • The continuous drain current rating of IXFN64N50PD3 is 64A.

  3. What is the on-state resistance (RDS(on)) of IXFN64N50PD3?

    • The on-state resistance (RDS(on)) of IXFN64N50PD3 is typically 0.085 ohms.

  4. What is the gate threshold voltage of IXFN64N50PD3?

    • The gate threshold voltage of IXFN64N50PD3 is typically 4V.

  5. What are the typical applications for IXFN64N50PD3?

    • IXFN64N50PD3 is commonly used in applications such as motor drives, inverters, and power supplies.

  6. What is the maximum junction temperature of IXFN64N50PD3?

    • The maximum junction temperature of IXFN64N50PD3 is 150°C.

  7. What is the input capacitance of IXFN64N50PD3?

    • The input capacitance of IXFN64N50PD3 is typically 3200pF.

  8. Does IXFN64N50PD3 have built-in protection features?

    • Yes, IXFN64N50PD3 has built-in overcurrent protection and thermal shutdown features.

  9. What is the package type of IXFN64N50PD3?

    • IXFN64N50PD3 comes in a TO-268 package.

  10. What are the recommended operating conditions for IXFN64N50PD3?

    • The recommended operating temperature range for IXFN64N50PD3 is -55°C to 150°C, and the recommended gate-source voltage is typically 10V.