IXTA1R4N120P
Product Overview
- Category: Power MOSFET
- Use: Power switching applications
- Characteristics: High voltage, low on-resistance, fast switching speed
- Package: TO-220AB
- Essence: High-performance power MOSFET for various applications
- Packaging/Quantity: Bulk packaging, quantity varies
Specifications
- Voltage Rating: 120V
- Current Rating: 30A
- On-Resistance: 0.04 ohms
- Gate Charge: 45nC
- Operating Temperature: -55°C to 175°C
Detailed Pin Configuration
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
Functional Features
- High voltage capability
- Low gate charge
- Fast switching speed
- Low on-resistance
Advantages and Disadvantages
- Advantages:
- High performance
- Suitable for high voltage applications
- Fast switching speed
- Disadvantages:
- Higher gate charge compared to some alternatives
Working Principles
The IXTA1R4N120P operates based on the principles of field-effect transistors, utilizing its high voltage capability and low on-resistance to efficiently switch power in various applications.
Detailed Application Field Plans
- Industrial motor control
- Power supplies
- Inverters
- Automotive systems
Detailed and Complete Alternative Models
- Infineon IPP110N20N3
- STMicroelectronics STP55NF06L
- Vishay SIHP30N60E
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What is IXTA1R4N120P?
- IXTA1R4N120P is a high-power insulated-gate bipolar transistor (IGBT) module commonly used in power electronic applications.
What are the key specifications of IXTA1R4N120P?
- The IXTA1R4N120P typically has a voltage rating of 1200V, a current rating of 75A, and a power rating of 300W.
What are the typical applications of IXTA1R4N120P?
- IXTA1R4N120P is often used in motor drives, renewable energy systems, industrial automation, and power supplies.
What are the advantages of using IXTA1R4N120P in technical solutions?
- Some advantages include high power density, low switching losses, and high reliability in demanding environments.
What are the common challenges when integrating IXTA1R4N120P into a technical solution?
- Challenges may include thermal management, protection circuitry design, and ensuring proper gate drive signals.
What cooling methods are suitable for IXTA1R4N120P?
- Common cooling methods include air cooling, liquid cooling, and heat sinks designed for efficient heat dissipation.
How can I ensure the reliable operation of IXTA1R4N120P in my application?
- Proper derating, thermal management, and adhering to manufacturer's guidelines for layout and assembly are crucial for reliable operation.
What are the recommended control strategies for driving IXTA1R4N120P in power electronic systems?
- Pulse-width modulation (PWM) control and overcurrent protection are commonly used control strategies for IXTA1R4N120P.
Are there any specific precautions to consider when handling IXTA1R4N120P modules?
- Precautions may include proper ESD protection, careful handling to avoid damage to sensitive components, and following safe assembly practices.
Where can I find additional resources and support for designing with IXTA1R4N120P?
- Manufacturer datasheets, application notes, and technical support from semiconductor companies can provide valuable resources for designing with IXTA1R4N120P.