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IXTH10N100D2
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IXTH10N100D2

Product Overview

  • Category: Power MOSFET
  • Use: High voltage, high-speed switching applications
  • Characteristics: Low on-resistance, fast switching speed, high ruggedness
  • Package: TO-247
  • Essence: Power management
  • Packaging/Quantity: Tube/50 units

Specifications

  • Voltage Rating: 1000V
  • Current Rating: 10A
  • On-Resistance: 0.35Ω
  • Gate Charge: 45nC
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source

Functional Features

  • Fast switching speed for high-efficiency power conversion
  • Low on-resistance for reduced power dissipation
  • High ruggedness for reliable operation in harsh conditions

Advantages and Disadvantages

Advantages

  • High voltage rating suitable for various applications
  • Low on-resistance minimizes power loss
  • Fast switching speed improves efficiency

Disadvantages

  • Higher gate charge compared to some alternative models
  • Limited current rating for certain high-power applications

Working Principles

The IXTH10N100D2 operates based on the principles of field-effect transistors, utilizing the control of the gate voltage to modulate the flow of current between the drain and source terminals.

Detailed Application Field Plans

The IXTH10N100D2 is ideal for use in high-voltage power supplies, motor drives, and inverters where efficient power management and high reliability are crucial. Its characteristics make it suitable for industrial and automotive applications.

Detailed and Complete Alternative Models

  • Alternative Model 1: IXFN10N100Q2
  • Alternative Model 2: IRFP4668PBF
  • Alternative Model 3: STW12NK100Z

This completes the English editing encyclopedia entry structure for IXTH10N100D2, providing comprehensive information about the product, its specifications, features, and application areas.

10 pirs û bersivên hevpar ên têkildarî sepana IXTH10N100D2 di çareseriyên teknîkî de navnîş bikin

  1. What is IXTH10N100D2?

    • IXTH10N100D2 is a high voltage power MOSFET designed for various technical solutions requiring efficient power management.

  2. What are the key features of IXTH10N100D2?

    • The key features include a high voltage rating of 1000V, low on-resistance, fast switching speed, and rugged construction for reliable performance.

  3. In what applications can IXTH10N100D2 be used?

    • IXTH10N100D2 is commonly used in applications such as motor control, power supplies, inverters, and welding equipment.

  4. What is the maximum current rating of IXTH10N100D2?

    • The maximum continuous drain current rating of IXTH10N100D2 is typically around 10A.

  5. How does IXTH10N100D2 contribute to energy efficiency in technical solutions?

    • IXTH10N100D2's low on-resistance and fast switching speed help minimize power losses and improve overall energy efficiency in power management applications.

  6. What are the thermal considerations for using IXTH10N100D2?

    • Proper heat sinking and thermal management are important for ensuring the reliable operation of IXTH10N100D2, especially in high-power applications.

  7. Can IXTH10N100D2 be used in automotive applications?

    • Yes, IXTH10N100D2 is suitable for certain automotive applications, particularly in electric vehicle systems and battery management.

  8. Are there any recommended driver ICs for driving IXTH10N100D2?

    • Several manufacturers offer compatible gate driver ICs that are suitable for driving IXTH10N100D2 effectively.

  9. What protection features does IXTH10N100D2 offer?

    • IXTH10N100D2 may include built-in protection against overcurrent, overvoltage, and thermal overload to enhance system reliability.

  10. Where can I find detailed technical specifications and application notes for IXTH10N100D2?

    • Detailed technical specifications and application notes for IXTH10N100D2 can be found on the manufacturer's website or in the product datasheet.