DS1013M-35

Product Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: TO-92
Essence: Transistor
Packaging/Quantity: Bulk Packaging, 1000 units per box

Specifications

• Model Number: DS1013M-35
• Type: NPN Bipolar Junction Transistor
• Maximum Collector Current (Ic): 500mA
• Maximum Collector-Emitter Voltage (Vceo): 30V
• Maximum Power Dissipation (Pd): 625mW
• Transition Frequency (ft): 300MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The DS1013M-35 transistor has three pins:

1. Collector (C): This pin is connected to the positive terminal of the power supply.
2. Base (B): The input signal is applied to this pin for amplification.
3. Emitter (E): This pin is connected to the negative terminal of the power supply.

Functional Features

• High gain amplification of weak signals.
• Low noise operation for improved signal quality.
• Suitable for small-signal amplification applications.
• Compact TO-92 package for easy integration into circuits.
• Wide operating temperature range for versatile usage.

Advantages and Disadvantages

Advantages: - High gain amplification improves signal strength. - Low noise operation ensures signal clarity. - Compact package allows for space-efficient circuit design. - Wide operating temperature range enables usage in various environments.

Disadvantages: - Limited maximum collector current may restrict certain applications. - Lower power dissipation compared to some alternative models. - Transition frequency may limit high-frequency applications.

Working Principles

The DS1013M-35 is an NPN bipolar junction transistor that operates based on the principles of amplification. When a small input signal is applied to the base pin, it controls the flow of current between the collector and emitter pins. This controlled current amplifies the input signal, allowing for increased signal strength at the output.

Detailed Application Field Plans

The DS1013M-35 transistor finds applications in various fields, including:

1. Audio Amplification: Used in audio circuits to amplify weak audio signals.
2. Communication Systems: Employed in radio frequency (RF) circuits for signal amplification.
3. Sensor Interfaces: Utilized in sensor circuits to amplify weak sensor signals.
4. Oscillator Circuits: Integrated into oscillator circuits for signal amplification.

Detailed and Complete Alternative Models

1. DS1013M-25: Similar to DS1013M-35 but with a lower transition frequency of 250MHz.
2. DS1013M-40: Similar to DS1013M-35 but with a higher maximum collector current of 800mA.
3. DS1013M-30S: Similar to DS1013M-35 but with a lower operating temperature range of -40°C to +125°C.

(Note: The above alternative models are just examples and not an exhaustive list.)

This entry provides a comprehensive overview of the DS1013M-35 transistor, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.