JR28F064M29EWHB TR

Product Overview

Category

JR28F064M29EWHB TR belongs to the category of flash memory chips.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Fast read and write speeds
• Non-volatile memory
• Compact size
• Low power consumption

Package

JR28F064M29EWHB TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital data reliably and efficiently.

Packaging/Quantity

This flash memory chip is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary, but commonly ranges from 1 to several hundred units.

Specifications

• Storage Capacity: 64 megabytes (MB)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The pin configuration of JR28F064M29EWHB TR may vary depending on the specific manufacturer. However, a typical pinout includes the following:

1. VCC: Power supply voltage
2. GND: Ground
3. CS: Chip select
4. SCK: Serial clock
5. SI: Serial input
6. SO: Serial output
7. WP: Write protect
8. HOLD: Hold input

Functional Features

• High-speed data transfer
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Security features such as data encryption and secure erase

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Compact size
• Low power consumption
• High reliability and durability
• Compatibility with various electronic devices

Disadvantages

• Limited number of program/erase cycles
• Relatively higher cost compared to other types of memory

Working Principles

JR28F064M29EWHB TR utilizes NAND flash memory technology. It stores data in a series of memory cells, which are organized into pages and blocks. When data is written, the memory cells are programmed by trapping electric charges. To read the data, the trapped charges are detected and interpreted as binary information.

Detailed Application Field Plans

JR28F064M29EWHB TR finds application in a wide range of electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to JR28F064M29EWHB TR include: - Micron MT29F064G08CBABA - Samsung K9F1G08U0D - Toshiba TC58NVG2S0FTA00

These models offer similar functionality and can be used as alternatives depending on specific requirements and compatibility.

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