MT29F1G08ABADAWP-IT:D

Product Overview

Category

MT29F1G08ABADAWP-IT:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F1G08ABADAWP-IT:D offers a storage capacity of 1 gigabit.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The product comes in a small form factor, enabling easy integration into different electronic devices.

Package and Quantity

MT29F1G08ABADAWP-IT:D is available in a surface-mount package. The exact package dimensions and pin configuration are detailed below. The product is typically sold in reels or trays, with quantities varying based on customer requirements.

Specifications

• Storage Capacity: 1 gigabit
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 100,000 cycles

Pin Configuration

The detailed pin configuration of MT29F1G08ABADAWP-IT:D is as follows:

```

Pin Name Function

VCC Power Supply GND Ground CE# Chip Enable# RE# Read Enable# WE# Write Enable# ALE Address Latch Enable CLE Command Latch Enable R/B# Ready/Busy# I/O[0:7] Data Input/Output ```

Functional Features

• Page Read and Program: MT29F1G08ABADAWP-IT:D allows for reading and programming data at the page level, providing efficient data management.
• Block Erase: It supports block erase operations, enabling quick deletion of large amounts of data.
• Error Correction Code (ECC): This NAND flash memory incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: The product implements wear-leveling techniques to distribute write operations evenly across memory blocks, extending its lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited erase/program cycles
• Sensitive to electrostatic discharge (ESD)

Working Principles

MT29F1G08ABADAWP-IT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading or writing data, the appropriate voltage levels are applied to the specific pins, allowing for data retrieval or modification.

Detailed Application Field Plans

MT29F1G08ABADAWP-IT:D finds applications in various electronic devices that require non-volatile data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Alternative Models

Here are some alternative models that offer similar functionality to MT29F1G08ABADAWP-IT:D: - MT29F1G08ABAEAWP-IT:D - MT29F1G08ABBEAWP-IT:D - MT29F1G08ABCEAWP-IT:D

These models have comparable specifications and can be considered as alternatives based on specific requirements.

In conclusion, MT29F1G08ABADAWP-IT:D is a NAND flash memory product with high storage capacity, fast data transfer rate, and reliable performance. It finds applications in various electronic devices and offers advantages such as low power consumption and compact form factor. However, it has limitations in terms of erase/program cycles and sensitivity to electrostatic discharge.