MT29F4G08ABADAH4-ITX:D

Product Overview

Category

MT29F4G08ABADAH4-ITX:D belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABADAH4-ITX:D offers a storage capacity of 4 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product ensures data integrity and reliability through advanced error correction techniques.
• Low power consumption: The MT29F4G08ABADAH4-ITX:D is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F4G08ABADAH4-ITX:D is typically packaged in a surface-mount technology (SMT) package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 4 GB
• Interface: NAND Flash
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Data Transfer Rate: Up to 400 megabits per second (Mbps)

Detailed Pin Configuration

The MT29F4G08ABADAH4-ITX:D follows a standard pin configuration for NAND flash memory. The pinout diagram is as follows:

Pin 1: VCC Pin 2: ALE Pin 3: CLE Pin 4: CE# Pin 5: RE# Pin 6: WE# Pin 7: R/B# Pin 8: VSS Pin 9-16: Address Inputs (A0-A7) Pin 17-24: Address Inputs (A8-A15) Pin 25-32: Data Inputs/Outputs (DQ0-DQ7) Pin 33: NC (No Connection) Pin 34: WP# Pin 35: RY/BY# Pin 36: VCC

Functional Features

The MT29F4G08ABADAH4-ITX:D offers several functional features that enhance its performance and usability:

1. Page Read and Program: The product allows for efficient reading and programming of data at the page level, enabling faster data access.
2. Block Erase: It supports block erase operations, which facilitate the deletion of large amounts of data in a single operation.
3. Wear-Leveling: The NAND flash memory incorporates wear-leveling algorithms to distribute write operations evenly across memory blocks, prolonging the product's lifespan.
4. Error Correction Code (ECC): Advanced ECC techniques are implemented to detect and correct errors that may occur during data transfer, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate enhances overall system performance.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package allows for easy integration into various electronic devices.
• Reliable performance ensures data integrity and longevity.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of memory.

Working Principles

The MT29F4G08ABADAH4-ITX:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. These cells are made up of floating-gate transistors that can retain charge even when the power is turned off.

To write data, an electrical charge is applied to the floating gate, altering its state and storing the desired information. Reading data involves detecting the charge level in each memory cell, representing binary values.

The product's controller manages the read, write, and erase operations, ensuring proper data transfer and integrity.

Detailed Application Field Plans

The MT29F4G08ABADAH4-ITX:D finds application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F4G08ABADAH4-ITX:E
2. MT29F4G08ABADAH4-ITX:F
3. MT29F4G08ABADAH4-ITX: