MT47H256M8EB-25E XIT:C

Product Overview

Category

MT47H256M8EB-25E XIT:C belongs to the category of semiconductor memory products.

Use

It is primarily used as a storage component in electronic devices such as computers, smartphones, and other digital devices.

Characteristics

• High-speed data transfer capabilities
• Large storage capacity
• Low power consumption
• Reliable performance
• Compact package size

Package

MT47H256M8EB-25E XIT:C is available in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

MT47H256M8EB-25E XIT:C is typically packaged in trays or reels, with each package containing a specific quantity of memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 256 Megabits (32 Megabytes)
• Speed Grade: 25E
• Operating Voltage: 1.5V
• Organization: 256M words x 8 bits
• Interface: Parallel
• Clock Frequency: Up to 800 MHz
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT47H256M8EB-25E XIT:C has a total of 60 pins, which are arranged as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. NC
12. NC
13. NC
14. NC
15. DQ8
16. DQ9
17. DQ10
18. DQ11
19. DQ12
20. DQ13
21. DQ14
22. DQ15
23. VSS
24. A0
25. A1
26. A2
27. A3
28. A4
29. A5
30. A6
31. A7
32. VSS
33. A8
34. A9
35. A10
36. A11
37. A12
38. A13
39. A14
40. A15
41. VSS
42. BA0
43. BA1
44. RAS#
45. CAS#
46. WE#
47. VSS
48. VDD
49. VDD
50. VSS
51. CK
52. CKE
53. CS#
54. DM0
55. DM1
56. VSS
57. DQS0
58. DQS#0
59. VSS
60. VDD

Functional Features

• High-speed data transfer with low latency
• Support for burst mode operations
• On-die termination (ODT) for improved signal integrity
• Auto-refresh and self-refresh modes for power-saving operation
• Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

• Fast data transfer speeds
• Large storage capacity
• Low power consumption
• Reliable performance
• Compact package size

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited compatibility with older devices that do not support DDR3 SDRAM

Working Principles

MT47H256M8EB-25E XIT:C operates based on the principles of DDR3 SDRAM technology. It stores digital data in an array of memory cells, which can be accessed and manipulated at high speeds. The memory cells are organized into rows and columns, with each cell storing a single bit of information. The data is read from or written to the memory by sending appropriate signals through the pins of the device.

Detailed Application Field Plans

MT47H256M8EB-25E XIT:C finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT47H256M8EB-25E XIT:C include: - MT47H128M8BT-25E:A - MT47H512M8BN-25E:B - MT47H1024M16HR-25E:C - MT47H2048M32HR-25E:D - MT47H4096M64HR