The BF861A,215 is a semiconductor product belonging to the category of field-effect transistors (FETs). This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
The BF861A,215 has the following key specifications: - Maximum Drain-Source Voltage: Vds = 20V - Continuous Drain Current: Id = 30mA - Total Power Dissipation: Ptot = 225mW - Operating Temperature Range: -55°C to +150°C
The BF861A,215 typically features three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
The BF861A,215 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of a channel.
The BF861A,215 finds applications in various electronic circuits, including: - Radio frequency (RF) amplifiers - Oscillator circuits - Low-noise amplifiers (LNA) - Signal processing circuits
Some alternative models to the BF861A,215 include: - BF862 - BF862,215 - BF862,235
In conclusion, the BF861A,215 serves as a crucial component in high-frequency amplification circuits, offering low noise and high gain characteristics. Its compact package and versatile applications make it a valuable choice for various electronic designs.
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What is BF861A,215?
What are the typical applications of BF861A,215?
What is the maximum drain-source voltage for BF861A,215?
What is the typical gain of BF861A,215 in RF applications?
What is the input capacitance of BF861A,215?
Can BF861A,215 be used in low-noise amplifier (LNA) designs?
What is the recommended biasing configuration for BF861A,215?
Does BF861A,215 require any special heat dissipation considerations?
Are there any specific layout considerations when using BF861A,215 in RF circuits?
Where can I find detailed application notes for using BF861A,215 in technical solutions?