NXP USA Inc.
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PDTA114ES,126
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PDTA114ES,126

Product Overview

  • Belongs to: Transistor
  • Category: Bipolar transistors
  • Use: Amplification and switching applications
  • Characteristics: Small signal NPN transistor, high current gain, low voltage drop
  • Package: SOT416 (SC-75)
  • Essence: Small size, suitable for compact electronic devices
  • Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Type: NPN
  • VCEO: 50 V
  • IC: 100 mA
  • hFE: 100 to 400
  • Ptot: 200 mW
  • fT: 250 MHz

Detailed Pin Configuration

  1. Base (B)
  2. Emitter (E)
  3. Collector (C)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed

Advantages

  • Small package size
  • Suitable for high-density PCB designs
  • Wide range of hFE values

Disadvantages

  • Limited power dissipation
  • Lower voltage and current ratings compared to larger transistors

Working Principles

The PDTA114ES,126 operates as a small signal NPN transistor, amplifying and switching electronic signals. When a small current flows into the base (B) terminal, it controls a larger current flowing between the collector (C) and emitter (E) terminals.

Detailed Application Field Plans

  1. Audio amplification circuits
  2. Signal processing circuits
  3. Switching circuits in portable electronic devices

Detailed and Complete Alternative Models

  1. BC847B,215
  2. MMBT3904,215
  3. 2N3904

This comprehensive entry provides detailed information about the PDTA114ES,126 transistor, including its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

10 pirs û bersivên hevpar ên têkildarî sepana PDTA114ES,126 di çareseriyên teknîkî de navnîş bikin

  1. What is PDTA114ES,126?

    • PDTA114ES,126 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.

  2. What are the key features of PDTA114ES,126?

    • The key features include high current gain, low saturation voltage, and high transition frequency, making it suitable for various technical solutions.

  3. What are the typical applications of PDTA114ES,126?

    • Typical applications include audio amplification, signal processing, sensor interfacing, and low-power switching circuits.

  4. What is the maximum collector current rating of PDTA114ES,126?

    • The maximum collector current rating is 100mA, which makes it suitable for low to moderate current applications.

  5. What is the voltage rating for PDTA114ES,126?

    • The maximum collector-emitter voltage (VCEO) is 50V, making it suitable for low-voltage applications.

  6. Is PDTA114ES,126 suitable for high-frequency applications?

    • Yes, PDTA114ES,126 has a high transition frequency (fT) of 250MHz, making it suitable for high-frequency applications such as RF amplification.

  7. Can PDTA114ES,126 be used in low-power applications?

    • Yes, PDTA114ES,126 has a low saturation voltage, making it suitable for low-power applications where minimizing power dissipation is important.

  8. What are the recommended operating conditions for PDTA114ES,126?

    • The recommended operating conditions include a collector current (IC) of 10-100mA, a collector-emitter voltage (VCE) of up to 50V, and a maximum power dissipation of 200mW.

  9. Does PDTA114ES,126 require any external components for typical applications?

    • For typical applications such as amplification and switching, PDTA114ES,126 may require external resistors, capacitors, and biasing components depending on the specific circuit requirements.

  10. Where can I find detailed technical specifications and application notes for PDTA114ES,126?

    • Detailed technical specifications and application notes for PDTA114ES,126 can be found in the datasheet provided by the manufacturer or distributor.