NXP USA Inc.
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PHD108NQ03LT,118
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PHD108NQ03LT,118

Product Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High power handling capacity, low on-resistance, fast switching speed
  • Package: TO-252 (DPAK)
  • Essence: Efficient power management
  • Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

  • Voltage Rating: 30V
  • Current Rating: 75A
  • On-Resistance: 10.5 mΩ
  • Gate Charge: 25nC
  • Operating Temperature: -55°C to 175°C

Detailed Pin Configuration

  • Pin 1: Source
  • Pin 2: Gate
  • Pin 3: Drain

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for improved efficiency
  • Enhanced thermal performance for reliability

Advantages

  • High power handling capacity
  • Low on-resistance
  • Reliable thermal performance

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during installation

Working Principles

The PHD108NQ03LT,118 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of power switching applications, including motor control, power supplies, and DC-DC converters.

Detailed and Complete Alternative Models

  • PHD110NQ03LT,118
  • PHD106NQ03LT,118
  • PHD112NQ03LT,118

Note: The alternative models listed above are similar in specifications and functionality to the PHD108NQ03LT,118.

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10 pirs û bersivên hevpar ên têkildarî sepana PHD108NQ03LT,118 di çareseriyên teknîkî de navnîş bikin

Sure, here are 10 common questions and answers related to the application of PHD108NQ03LT,118 in technical solutions:

  1. What is the maximum drain-source voltage (VDS) for PHD108NQ03LT,118?

    • The maximum drain-source voltage (VDS) for PHD108NQ03LT,118 is 30V.

  2. What is the continuous drain current (ID) rating for PHD108NQ03LT,118?

    • The continuous drain current (ID) rating for PHD108NQ03LT,118 is 120A.

  3. What is the on-state resistance (RDS(on)) for PHD108NQ03LT,118?

    • The on-state resistance (RDS(on)) for PHD108NQ03LT,118 is typically 1.8mΩ at VGS = 10V.

  4. What is the gate-source voltage (VGS) range for PHD108NQ03LT,118?

    • The gate-source voltage (VGS) range for PHD108NQ03LT,118 is ±20V.

  5. Can PHD108NQ03LT,118 be used in automotive applications?

    • Yes, PHD108NQ03LT,118 is suitable for automotive applications.

  6. What is the operating temperature range for PHD108NQ03LT,118?

    • The operating temperature range for PHD108NQ03LT,118 is -55°C to 175°C.

  7. Is PHD108NQ03LT,118 suitable for use in power management applications?

    • Yes, PHD108NQ03LT,118 is commonly used in power management applications.

  8. Does PHD108NQ03LT,118 require a heat sink for high-power applications?

    • It is recommended to use a heat sink for high-power applications to ensure proper thermal management.

  9. What type of package does PHD108NQ03LT,118 come in?

    • PHD108NQ03LT,118 is available in a PowerPAK® SO-8 package.

  10. Are there any specific ESD handling precautions for PHD108NQ03LT,118?

    • Standard ESD handling precautions should be followed when working with PHD108NQ03LT,118 to prevent damage from electrostatic discharge.

I hope these answers provide the information you were looking for! If you have any more questions, feel free to ask.