UNR9114J0L
Product Overview
Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: High voltage, high current, low saturation voltage
Package: TO-220AB
Essence: Power transistor for general-purpose applications
Packaging/Quantity: Bulk packaging, quantity varies
Specifications
- Collector-Emitter Voltage: 400V
- Collector Current: 10A
- Total Power Dissipation: 50W
- Transition Frequency: 2MHz
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
- Base (B)
- Emitter (E)
- Collector (C)
Functional Features
- High voltage capability
- Low spread of dynamic parameters
- Very high switching speed
- Extremely rugged
- Tight hFE range
Advantages
- Suitable for a wide range of applications
- Robust and reliable performance
- Low saturation voltage
- High current capability
- Fast switching speed
Disadvantages
- Relatively large package size
- Limited operating temperature range
Working Principles
The UNR9114J0L operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its layers to amplify or switch electronic signals.
Detailed Application Field Plans
This power transistor is commonly used in audio amplifiers, power supplies, motor control circuits, and other general-purpose electronic applications requiring high voltage and current capabilities.
Detailed and Complete Alternative Models
- TIP31C
- 2N3055
- MJ15003
- MJE13005
In conclusion, the UNR9114J0L power transistor offers high voltage and current capabilities, making it suitable for a wide range of electronic applications. While it has certain limitations such as package size and operating temperature range, its advantages include robust performance, low saturation voltage, and fast switching speed.
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What is UNR9114J0L?
- UNR9114J0L is a PNP transistor used in various technical solutions for amplification and switching purposes.
What are the key specifications of UNR9114J0L?
- The key specifications of UNR9114J0L include a collector current of 1A, a collector-emitter voltage of 50V, and a power dissipation of 900mW.
How is UNR9114J0L commonly used in technical solutions?
- UNR9114J0L is commonly used in audio amplifiers, signal processing circuits, and general switching applications due to its high current and voltage capabilities.
What are the typical operating conditions for UNR9114J0L?
- The typical operating conditions for UNR9114J0L include a collector current of 100mA, a collector-emitter voltage of 5V, and an ambient temperature range of -55°C to 150°C.
Can UNR9114J0L be used in high-frequency applications?
- UNR9114J0L is not suitable for high-frequency applications due to its limited frequency response and transition frequency.
Are there any recommended alternative transistors to UNR9114J0L?
- Some recommended alternative transistors to UNR9114J0L include BC557, 2N3906, and S8550, which offer similar characteristics and performance.
What precautions should be taken when using UNR9114J0L in technical solutions?
- Precautions such as proper heat sinking, avoiding overvoltage conditions, and ensuring correct polarity should be taken when using UNR9114J0L to prevent damage and ensure reliable operation.
Is UNR9114J0L suitable for low-power applications?
- Yes, UNR9114J0L can be used in low-power applications due to its low saturation voltage and moderate power dissipation.
What are the typical circuit configurations for UNR9114J0L?
- Common circuit configurations for UNR9114J0L include common emitter, common collector, and emitter follower configurations, depending on the specific application requirements.
Where can I find detailed datasheets and application notes for UNR9114J0L?
- Detailed datasheets and application notes for UNR9114J0L can be found on semiconductor manufacturer websites, distributor platforms, and technical documentation repositories.