SI2315BDS-T1-GE3
Product Overview
Category
The SI2315BDS-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in various electronic circuits and applications where efficient power management and switching capabilities are required.
Characteristics
- Low on-resistance
- High-speed switching
- Low gate drive voltage
- Enhanced thermal performance
Package
The SI2315BDS-T1-GE3 is typically available in a compact and industry-standard SOT-23 package.
Essence
This MOSFET is essential for optimizing power efficiency and control in electronic devices and systems.
Packaging/Quantity
It is usually supplied in reels with a standard quantity per reel, typically 3000 pieces.
Specifications
- Drain-Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 2.6A
- On-Resistance (Rds On): 0.06 Ohms
- Power Dissipation (Pd): 1.25W
- Gate-Source Voltage (Vgs): ±8V
Detailed Pin Configuration
The SI2315BDS-T1-GE3 features a standard SOT-23 pin configuration: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- Fast switching speed
- Low power consumption
- Reliable and robust performance
- Compatibility with low-voltage control circuits
Advantages
- Enhanced power efficiency
- Compact form factor
- Suitable for battery-powered applications
- Wide operating temperature range
Disadvantages
- Limited maximum current handling capability
- Sensitivity to electrostatic discharge (ESD)
Working Principles
The SI2315BDS-T1-GE3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and high-speed switching characteristics to efficiently control the flow of power in electronic circuits.
Detailed Application Field Plans
The SI2315BDS-T1-GE3 is widely used in: - Portable electronic devices - Battery management systems - LED lighting applications - Power supply units - Motor control circuits
Detailed and Complete Alternative Models
- SI2301DS-T1-GE3
- SI2323DS-T1-GE3
- SI2333DDS-T1-GE3
- SI2341DS-T1-GE3
In conclusion, the SI2315BDS-T1-GE3 power MOSFET offers a balance of performance, size, and efficiency, making it a versatile component for various electronic applications.
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What is the maximum drain-source voltage of SI2315BDS-T1-GE3?
- The maximum drain-source voltage of SI2315BDS-T1-GE3 is 20V.
What is the continuous drain current of SI2315BDS-T1-GE3?
- The continuous drain current of SI2315BDS-T1-GE3 is 3.7A.
What is the on-resistance of SI2315BDS-T1-GE3?
- The on-resistance of SI2315BDS-T1-GE3 is typically 60mΩ at Vgs=4.5V.
Can SI2315BDS-T1-GE3 be used in battery protection circuits?
- Yes, SI2315BDS-T1-GE3 can be used in battery protection circuits due to its low on-resistance and high drain-source voltage rating.
Is SI2315BDS-T1-GE3 suitable for load switching applications?
- Yes, SI2315BDS-T1-GE3 is suitable for load switching applications due to its high drain current capability.
What is the typical gate threshold voltage of SI2315BDS-T1-GE3?
- The typical gate threshold voltage of SI2315BDS-T1-GE3 is 1.5V.
Can SI2315BDS-T1-GE3 be used in automotive electronics?
- Yes, SI2315BDS-T1-GE3 can be used in automotive electronics due to its robustness and high temperature capabilities.
Does SI2315BDS-T1-GE3 require a heat sink in high-power applications?
- In high-power applications, it is recommended to use a heat sink with SI2315BDS-T1-GE3 to ensure proper thermal management.
What is the operating temperature range of SI2315BDS-T1-GE3?
- The operating temperature range of SI2315BDS-T1-GE3 is -55°C to 150°C.
Is SI2315BDS-T1-GE3 RoHS compliant?
- Yes, SI2315BDS-T1-GE3 is RoHS compliant, making it suitable for environmentally conscious designs.