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SI3948DV-T1-E3

SI3948DV-T1-E3

Product Overview

Category

The SI3948DV-T1-E3 belongs to the category of power MOSFETs.

Use

It is used for power management and switching applications in various electronic devices and systems.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The SI3948DV-T1-E3 is available in a D2PAK package.

Essence

This MOSFET is essential for efficient power control and management in electronic circuits.

Packaging/Quantity

The SI3948DV-T1-E3 is typically packaged in reels with a quantity of 2500 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 30A
  • On-Resistance (RDS(on)): 6.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 38nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI3948DV-T1-E3 has a standard pin configuration with three pins: Gate (G), Drain (D), and Source (S).

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low on-resistance minimizes power loss and improves efficiency.
  • Fast switching speed enables rapid control of power flow.

Advantages

  • High voltage capability suitable for diverse applications.
  • Low on-resistance reduces power dissipation and improves efficiency.
  • Fast switching speed enhances performance in dynamic systems.

Disadvantages

  • May require careful consideration of gate drive circuitry for optimal performance.
  • Higher gate charge compared to some alternative models.

Working Principles

The SI3948DV-T1-E3 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The SI3948DV-T1-E3 is commonly used in: - Power supplies - Motor control systems - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the SI3948DV-T1-E3 include: - SI7856DP-T1-GE3 - FDD6637 - IRF1405

In conclusion, the SI3948DV-T1-E3 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management and switching applications in electronic systems.

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10 pirs û bersivên hevpar ên têkildarî sepana SI3948DV-T1-E3 di çareseriyên teknîkî de navnîş bikin

  1. What is the maximum voltage rating for SI3948DV-T1-E3?

    • The maximum voltage rating for SI3948DV-T1-E3 is 30V.
  2. What is the typical on-state resistance of SI3948DV-T1-E3?

    • The typical on-state resistance of SI3948DV-T1-E3 is 6.5mΩ.
  3. Can SI3948DV-T1-E3 be used in automotive applications?

    • Yes, SI3948DV-T1-E3 is suitable for automotive applications.
  4. What is the maximum continuous drain current for SI3948DV-T1-E3?

    • The maximum continuous drain current for SI3948DV-T1-E3 is 120A.
  5. Does SI3948DV-T1-E3 have over-temperature protection?

    • Yes, SI3948DV-T1-E3 features over-temperature protection.
  6. Is SI3948DV-T1-E3 RoHS compliant?

    • Yes, SI3948DV-T1-E3 is RoHS compliant.
  7. What is the recommended operating temperature range for SI3948DV-T1-E3?

    • The recommended operating temperature range for SI3948DV-T1-E3 is -55°C to 150°C.
  8. Can SI3948DV-T1-E3 be used in power management applications?

    • Yes, SI3948DV-T1-E3 is suitable for power management applications.
  9. What is the gate threshold voltage for SI3948DV-T1-E3?

    • The gate threshold voltage for SI3948DV-T1-E3 is typically 2.35V.
  10. Does SI3948DV-T1-E3 require an external freewheeling diode?

    • No, SI3948DV-T1-E3 does not require an external freewheeling diode due to its integrated body diode.