onsemi (Ansemi) 1N5821G 30V 3A 900mV@9.4A Schottky Barrier Rectifier, 3.0 A, 30 V

onsemi (Ansemi)

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1N5821G

30V 3A [email protected] Schottky Barrier Rectifier, 3.0 A, 30 V

Hejmara Part

1N5821G

Liq

Diodes > General Purpose Diodes

Çêker/Brand

onsemi (Ansemi)

Encapsulation

DO-27

Bixçe

boxed

Hejmara pakêtan

500

Terîf

The Schottky rectifier uses the Schottky barrier principle and uses a large area metal-silicon power diode. The advanced geometry of this Schottky rectifier features chromium barrier metal, epitaxial structure with oxide passivation, and metal-covered contacts. The rectifier is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.

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