Toshiba Semiconductor and Storage TK12E80W,S1X MOSFET N-CH 800V 11.5A TO220 - YYIC bikire

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TK12E80W,S1X

Agahiyên Zêdetir Binêrin DataSheets

TK12E80W,S1X

MOSFET N-CH 800V 11.5A TO220

Hejmara Part

TK12E80W,S1X

Çêker/Brand

Toshiba Semiconductor and Storage

Doranî

DTMOSIV

Rewşa Part

Active

Packaging

Tube

Teknolocî

MOSFET (Metal Oxide)

Germahiya xebitandinê

150°C

Mounting Type

Through Hole

Pakêt / Case

TO-220-3

Supplier Device Package

TO-220

Belavkirina hêzê (Max)

165W (Tc)

Tîpa FET

N-Channel

Taybetmendiya FET

-

Avêtin ber voltaja çavkaniyê (Vdss)

800V

Niha - Berdewam Drain (Id) @ 25°C

11.5A (Ta)

Rds On (Max) @ Id, Vgs

450 mOhm @ 5.8A, 10V

Vgs (th) (Max) @ Id

4V @ 570µA

Barkirina Deriyê (Qg) (Max) @ Vgs

23nC @ 10V

Capacitance Input (Ciss) (Max) @ Vds

1400pF @ 300V

Voltaja ajotinê (Rd-ya herî zêde, hindik Rds-ê)

10V

Vgs (Max)

±20V

Daxwaza Quote

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