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NGTD13T65F2WP Trench Field Stop 650V IGBT 650V 30A FS2 Die

NGTD13T65F2WP

Trench Field Stop 650V IGBT 650V 30A FS2 Die
Hejmara Part
NGTD13T65F2WP
Liq
Transistor/MOS tube/transistor > IGBT tube/module
Çêker/Brand
onsemi (Ansemi)
Encapsulation
SMD
Bixçe
bagged
Hejmara pakêtan
1
Terîf
Utilizing a durable and cost-effective field-stop II trench structure, this insulated-gate bipolar transistor (IGBT) provides excellent performance in demanding switching applications and also offers low on-state voltage and lowest switching losses .
Daxwaza Quote
Ji kerema xwe hemû qadên pêwîst tije bikin û bikirtînin "RFQ bişînin", em ê di nav 12 saetan de bi e-nameyê bi we re têkilî daynin. Ger pirsgirêkek we hebe, ji kerema xwe peyam an e-nameyê ji [email protected] re bihêle, em ê di zûtirîn dem de bersiv bidin.
Ez bêzarim 53187 PCS
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