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NGTD17T65F2WP Trench Field Stop 650V IGBT 600V 40A FS2 Die

NGTD17T65F2WP

Trench Field Stop 650V IGBT 600V 40A FS2 Die
Hejmara Part
NGTD17T65F2WP
Liq
Transistor/MOS tube/transistor > IGBT tube/module
Çêker/Brand
onsemi (Ansemi)
Encapsulation
SMD
Bixçe
bagged
Hejmara pakêtan
1
Terîf
This Isolated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective field-stop II trench structure and provides excellent performance for demanding switching applications, providing low on-state voltage and minimizing switching losses.
Daxwaza Quote
Ji kerema xwe hemû qadên pêwîst tije bikin û bikirtînin "RFQ bişînin", em ê di nav 12 saetan de bi e-nameyê bi we re têkilî daynin. Ger pirsgirêkek we hebe, ji kerema xwe peyam an e-nameyê ji [email protected] re bihêle, em ê di zûtirîn dem de bersiv bidin.
Ez bêzarim 56699 PCS
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